GS-FPA-640×512 640×512 25μm Cooled Area‑array InGaAs Detector TE1/TE2 28-pin MDIP

1. Introduction

GS-FPA640*512 is a cooled InGaAs area-array focal-plane detector responding within 0.9-1.7 μm short-wave infrared waveband. It features 640*512 resolution with 25 μm pixel pitch and 16 mm *12.8 mm photosensitive target surface.

The sensor supports TE1 and TE2 two-grade TEC cooling configuration with low dark-current ≤0.2 pA. It achieves quantum efficiency ≥70%, fill factor＞99% and effective pixel rate＞99%, crosstalk＜1%. Dual-gain readout provides adjustable full-well-capacity for different signal intensity. Housed in 28-pin MDIP Kovar hermetic package, maximum pixel readout rate reaches 10 MHz. Suitable for solar-cell inspection, semiconductor testing, hyperspectral imaging and other scientific-grade infrared applications.

2. Product Features

1. Pixel layout:640 * 512, pixel pitch 25μm, target surface 16 mm *12.8 mm
2. 28-pin MDIP Kovar hermetic packaging, weight 24.467-24.6 g
3. TEC TE1 / TE2 thermoelectric cooling
4. Spectral response: 0.9 μm ~ 1.7 μm
5. High quantum efficiency ≥70%, fill factor＞99%, effective pixel rate＞99%
6. Low crosstalk＜1%, response non-uniformity ≤10%, nonlinearity ≤2%
7. High detectivity performance, adjustable high-gain / low-gain with matched full-well-capacity
8. Max pixel readout rate 10 MHz, power consumption 325 mW (without cooling), operating temperature-20℃~+85℃

3. Technical Specifications

Note: Specifications are for reference only and subject to change without prior notice.

4. Applications

Coastal & Border Surveillance, Solar Cell Inspection, Semiconductor Inspection, Laser Spot Detection, Hyperspectral Imaging, Medical OCT Imaging, Vision Enhancement for Assisted Driving, Forest Fire Prevention

5. FAQs

Q1: What cooling grades are available for GS-FPA640*512?

A: Two TEC grades: TE1 and TE2 for different detectivity demands.

Q2: What is the dark-current performance?

A: Dark current is controlled ≤0.2 pA.

Q3: Does it support gain switching?

A: Yes, high-gain and low-gain modes with corresponding full-well-capacity parameters.