SWIR InGaAs Cameras & Infrared Optoelectronic Test Products manufacturer
Xi'an Gatherstar Optoelectronic System Co.,Ltd (LeadingOE) is a state-certified high-tech manufacturer & integrated optoelectronic solution provider rooted in Xi'an, China, a city with world-class optical research resources. We integrate independent R&D, production, system integration, and global sales service, fully covering infrared & optoelectronic components, modules, imaging cameras and professional testing equipment.
Xi'an Gatherstar Optoelectronic System Co., Ltd
About Us2016
Year Established
30~40
employees
1 million-5 million
Annual Sales (USD)
300+
Customers Served
Top Products
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LRF‑18 1535nm Class 1 Eyesafe Laser Rangefinder Module Max 18km Heavy‑Duty 3800g OEM Custom Interface
1.Class 1 eye-safe 1535nm laser source, maximum measuring distance up to 18000m. 2.Long-range bare-module design, rich reserved interfaces for easy system embedding. 3.Supports single / continuous ranging, multi-target detection, self-check and wake-up trigger function. 4.Wide o
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LRF‑5 1535nm Class 1 Eyesafe Laser Rangefinder Module Max 5km Compact 95g OEM Custom Interface
1.Class 1 eye-safe 1535nm laser source, maximum measuring distance up to 5000m. 2.Compact bare-module form-factor, lightweight ≤95g for convenient system integration. 3.Supports single / continuous ranging, multi-target detection, self-check and wake-up trigger function. 4.Broad
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LRF‑3 1535nm Class 1 Eyesafe Laser Rangefinder Module Max 3km Compact 55g OEM Custom Interface
1.Class 1 eye-safe 1535nm laser source, maximum measuring distance up to 3000m. 2.Ultra-compact bare-module design, lightweight ≤55g for easy system embedding. 3.Supports single / continuous ranging, multi-target detection, self-check and wake-up trigger function. 4.Wide operatin
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Large‑Area Single‑Point InGaAs PIN Photodiode Short‑Wavelength Enhanced 0.6‑1.7μm OEM
1.Short-wavelength enhanced InGaAs PIN photodiode, spectral coverage 0.6μm-1.7μm (VIS-SWIR band). 2.Four aperture-size variants: Ø300μm / Ø455μm / Ø950μm / Ø1850μm for different light-receiving requirements. 3.Low dark current, high shunt resistance and high responsivity across v
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Inner‑Outer Dual‑Zone Quadrant Photoelectric Module 400‑1100nm OEM
1.Inner-outer dual-zone photosensitive design: inner φ2mm, outer φ10mm. 2.400-1100nm spectrum, peak response at 1.06 μm, responsivity ≥1.5×10⁴ V/W. 3.Different dynamic-range performance for inner zone(>70dB) and outer zone(>57dB). 4.Hermetic sealing, high shock-resistance, wide t
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GS-QD2416-3 Φ16mm Quadrant Photoelectric Module 400‑1100nm Compact High‑Sensitivity OEM
1.Large Φ16mm quadrant active photosensitive area. 2.400-1100nm spectral response for visible-near infrared detection. 3.Fast response, high-sensitivity quadrant sensing in compact housing. 4.Wide operating temperature range -40℃ ~ +50℃, good environmental adaptability.
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GS-QD2410-X Φ10mm Quadrant Photoelectric Module 400‑1100nm TO25 TO37 Package OEM
1.Integrated Si-PIN quadrant detector with built-in amplifier, Φ10mm active receiving area. 2.400-1100nm spectral response, supports laser pulse detection starting from 8ns. 3.Wide 60dB-125dB dynamic range, fast response and high detection sensitivity. 4.13 model variants with di
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GS-FPA-0640P15F 640×512 15μm Cooled Area‑array InGaAs Detector TE1/TE2 28‑pin SDIP OEM
1.Cooled InGaAs area-array, spectral options:0.9-1.7μm /1.1-1.9μm /1.2-2.2μm. 2.640×512 pixels, 15μm pixel pitch, 9.6 mm ×7.68 mm photosensitive target surface. 3.28-pin SDIP metal packaging, built-in TEC TE1/TE2 cooling, dual-gain adjustable. 4.Wide operating temperature-40℃~+70
Company Advantage
Trust Seal, Credit Check, RoSH and Supplier Capability Assessment. company has strictly quality control system and professional test lab.
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View MoreAdvanced automatic machines, strictly process control system. We can manufacture all the optoelectronic products beyond your demand.
View MoreBulk and customized small packaging, FOB, CIF, DDU and DDP. Let us help you find the best solution for all your concerns.
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Gatherstar Optoelectronic Concludes Successful Participation at the 3rd Changchun International Optoelectronics Expo
The three-day 3rd Changchun International Optoelectronics Expo successfully concluded on June 14, 2026 at the Northeast Asia International Expo Center. Centered on the theme “China Optoelectronics City, Innovate for the Future", this event gathered 890 optoelectronic enterprises and more than 2,000 ...
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Gatherstar Optoelectronic Successfully Wraps up Participation at CIOE 2026--27th China International Optoelectronic Expo
Held from September 9 to 11, 2026, the 27th China International Optoelectronic Exposition (CIOE 2026) concluded successfully at Shenzhen World Exhibition & Convention Center. As one of the most influential full-industry-chain events in the global optoelectronics sector, CIOE gathered over 4,000 ...