Large‑Area Single‑Point InGaAs PIN Photodiode Short‑Wavelength Enhanced 0.6‑1.7μm OEM

Place of Origin:China
Brand Name:Gatherstar (Leading)
Certification:CE; ISO
Minimum Order Quantity:1 Piece
Price:Contact Us
Payment Terms:T/T
Product Description

1. Product Overview

This is a short-wavelength enhanced large-area InGaAs PIN photodiode series. It supports 0.6μm-1.7μm visible-short-wave infrared detection. Four models with different receiving aperture sizes are provided. The planar-structure device features low leakage current, high shunt resistance, high responsivity and low stray absorption. Customization on chip and packaging is supported. It is widely used for optical power monitoring, spectral analysis, moisture & gas leak detection, infrared sensing and remote temperature measurement. 

2. Key Features

  • Highly-reliable planar chip construction
  • VIS-SWIR spectral response: 0.6μm ~ 1.7μm
  • Low leakage dark-current performance
  • High shunt resistance
  • High responsivity at multi-characteristic wavelengths
  • Low stray absorption
  • Customizable chip design and packaging options

3. Technical Specifications

GENERAL DESCRIPTIONS

Model No. Spectral Range Aperture Size Chip Length Chip Width Chip Thickness
μm μm μm μm μm
PIN0300-17V-D 0.6-1.7 Ø 300 410 ± 15 410 ± 15 150 ± 20
PIN0500-17V-D Ø 455 605 ± 15 605 ± 15 300 ± 20
PIN1000-17V-D Ø 950 1070 ± 15 1070 ± 15 300 ± 20
PIN2000-17V-D Ø 1850 2055 ± 15 2055 ± 15 300 ± 20


ABSOLUTE MAXIMUM RATINGS

Model No. Reverse Voltage Reverse Current Forward Current Ambient Temperature*1
In Operation In Storage
V mA mA ℃ ℃ ℃ ℃
Max. Max. Max. Min. Max. Min. Max.
PIN0300-17V-D 10 10 10 -40 +85 -40 +125
PIN0500-17V-D
PIN1000-17V-D
PIN2000-17V-D

*1:Non-condensing environment.


SPECIFICATIONS(TAMB=23℃)

Model No. Dark Current Shunt Resistance Capacitance 3dB Bandwidth
nA MΩ pF MHz
@-5 V @-10 mV @1 MHz, 0 V @1 MHz, -5 V @-5 V, 50Ω
Typ. Max. Min. Typ. Typ. Max. Typ. Max. Min. Typ.
PIN0300-17V-D 0.1 0.5 100 500 20 25 10 15 150 220
PIN0500-17V-D 0.3 1.5 60 300 40 50 20 25 90 110
PIN1000-17V-D 1 5 20 100 160 200 80 100 20 25
PIN2000-17V-D 5 20 5 25 640 800 320 400 6 8


Model No. Responsivity NEP
A/W 10¹⁴W/Hz
@0.65μm, 0 V @0.85μm, 0 V @1.3μm, 0 V @1.55μm, 0 V @1.55μm, 0 V
Min. Min. Min. Min. Typ. Max.
PIN0300-17V-D 0.2 0.35 0.8 0.9 1 2
PIN0500-17V-D 1.5 3
PIN1000-17V-D 2 4
PIN2000-17V-D 4 8


4. Applications

  • Optical power monitoring
  • Spectral analysis instruments
  • Moisture detection
  • Gas leak detection
  • Covert infrared sensing
  • Remote temperature sensing measurement

5. FAQs

Q1: What is the spectral response range of this series?

A: 0.6μm-1.7μm, short-wavelength enhanced for visible-short-wave infrared detection.

Q2: What aperture sizes are available?

A: Ø300μm, Ø455μm, Ø950μm and Ø1850μm four-size options.

Q3: Does this series support customization?

A: Yes, chip parameters and packaging solutions can be customized.

Q4: What are operating and storage temperature limits?

A: Operating:-40℃ ~ +85℃; Storage:-40℃ ~ +125℃, non-condensing environment required.

Product Summary

1.Short-wavelength enhanced InGaAs PIN photodiode, spectral coverage 0.6μm-1.7μm (VIS-SWIR band). 2.Four aperture-size variants: Ø300μm / Ø455μm / Ø950μm / Ø1850μm for different light-receiving requirements. 3.Low dark current, high shunt resistance and high responsivity across v

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